Description

Electronic Component Model: MRF8S21200HR6 is an RF FET designed for base station applications with frequencies from 728 to 768 MHz. It is capable of handling 63 W AVG power at 28 V in single W-CDMA lateral N-channel RF power MOSFET. The component can be used in both Class AB and Class C for all typical cellular base station modulation formats.

Specifications and features

• Frequency Range: 728-768 MHz
• Power Output: 63 W AVG
• Voltage: 28 V
• Package: 225°C Capable Plastic Package
• ESD protection: Integrated
• VSWR: Can handle up to 10:1 at 32 Vdc, 748 MHz, 360 Watts CW output power
• Gate-Source Voltage Range: Greater Negative for Improved Class C Operation

Application Scenarios

The RF FET, MRF8S21200HR6, is designed for base station applications, which is suitable for frequencies from 728 to 768 MHz and can be used in both Class AB and Class C for all typical cellular base station modulation formats. It is also optimized for Doherty applications and designed for digital predistortion error correction systems.

Comparison

• The component offers enhanced ruggedness capable of handling 10:1 VSWR
• Designed for digital predistortion error correction systems and optimized for Doherty applications
• Greater negative gate-source voltage range for improved Class C operation

• This model is only suitable for a specific frequency range of 728-768 MHz
• The power output of 63 W AVG may not be sufficient for some applications requiring higher power