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MRF6S19100GNR1 - Brand New Freescale / NXP RF FETs - Datasheet - Chipdatas

MRF6S19100GNR1 - Brand New Freescale / NXP RF FETs

In Stock:3512 ,Ready for Immediate Shipping
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In Stock: 3512, Ready for Immediate Shipping
Category:RF FETs
Chipdatas Part No.:CD93-MRF6S19100GNR1
Manufacturer Part No.:MRF6S19100GNR1
Datecode:09+
Package:TO-270-2 Gull Wing
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  • Description

    Electronic Component Model: MRF6S19100GNR1 is an RF Power Field Effect Transistor designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. It is suitable for TDMA, CDMA, and multicarrier amplifier applications, as well as Class AB for PCN-PCS/cellular radio and WLL applications.

    Specifications and features

    - Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 22 Watts Avg., f = 1987 MHz, IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16.1 dB. Drain Efficiency — 28% IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth. ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth. Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

    Features

    • Characterized with Series Equivalent Large-Signal Impedance Parameters
    • Internally Matched for Ease of Use
    • Qualified Up to a Maximum of 32 VDD Operation
    • Integrated ESD Protection
    • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
    • RoHS Compliant
    • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

    Application Scenarios

    MRF6S19100GNR1 can be used in various N-CDMA base station applications with frequencies from 1930 to 1990 MHz. It is suitable for TDMA, CDMA, and multicarrier amplifier applications. Additionally, it can be used in Class AB for PCN-PCS/cellular radio and WLL applications.

    Comparison

    Advantages

    - High Power output of 22 Watts Avg.

    - Wide frequency range of 1930 to 1990 MHz

    - Integrated ESD Protection

    - RoHS Compliant

    Disadvantages

    - Limited to N-CDMA base station applications

  • Similar parts: 800 , Click to view
    Attributes Value
    Category RF FETs
    Manufacturer NXP USA Inc.
    Product Category RF FETs
    Categories Transistors - FETs, MOSFETs - RF
    Series -
    Packaging Tape & Reel (TR)
    Part-Status Obsolete
    Transistor-Type LDMOS
    Frequency 1.99GHz
    Gain 14.5dB
    Voltage-Test 28V
    Current-Rating -
    Noise-Figure -
    Current-Test 950mA
    Power-Output 22W
    Voltage-Rated 68V
    Package-Case TO-270BA
    Supplier-Device-Package TO-270-2 GULL
    Base-Part-Number MRF6S19100
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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download MRF6S19100GNR1
  • Chipdatas Part: CD93-MRF6S19100GNR1
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/26 06:58 +0800
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    • Full or Partial Refund , If the item is not as described
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