SD57030-01 - Brand New STMicroelectronics RF FETs
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Description
The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. It is designed for high gain and broadband performance operating at 28V, making it ideal for base station applications requiring high linearity.
This transistor is an N-Channel enhancement-mode lateral MOSFET with excellent thermal stability. It has a common source configuration and offers a power output of 30W with 13 dB gain at 945 MHz. Additionally, it comes in a BeO free package.
Specifications and features
- Product Category: RF FETs
- Frequency range: Up to 1.0 GHz
- Operating voltage: 28V
- High gain and broadband performance
- Common source configuration
- Power output: 30W with 13 dB gain @ 945 MHz
- BeO free package
Application Scenarios
This SD57030-01 transistor is specifically designed for use in base station applications that require high linearity. It is suitable for both commercial and industrial applications.
Comparison
Advantages- Broadband performance
- High gain
- Excellent thermal stability
- BeO free package
Disadvantages- None identified
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download SD57030-01
- Chipdatas Part: CD93-SD57030-01
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/26 06:31 +0800
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