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ATF-55143-TR1G - Brand New Broadcom RF FETs - Datasheet - Chipdatas

ATF-55143-TR1G - Brand New Broadcom RF FETs

In Stock:5870 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 5870, Ready for Immediate Shipping
Brand:Broadcom
Category:RF FETs
Chipdatas Part No.:CD91-ATF-55143-TR1G
Manufacturer Part No.:ATF-55143-TR1G
Datecode:09+
Package:SOT-343
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  • Description

    ATF-55143-TR1G is a product of Avago Technologies in the RF FETs category. This electronic component is a single supply E-PHEMT used for high dynamic range, very low noise applications. It is housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The product's combination of high gain, high linearity, and low noise makes it ideal for various applications such as cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range.

    Specifications and features

    The following are the specifications and features of the ATF-55143-TR1G:

    • High linearity performance
    • Single Supply Enhancement Mode Technology
    • Very low noise figure
    • Excellent uniformity in product specifications
    • 400-micron gate width
    • Low cost surface mount small plastic package SOT-343 (4 lead SC-70)
    • Tape-and-Reel packaging option available
    • Lead-Free Option Available

    The following are the specifications of ATF-55143-TR1G:

    • 2 GHz; 2.7V, 10 mA (Typ.)
    • 24.2 dBm output 3rd order intercept
    • 14.4 dBm output power at 1 dB gain compression
    • 0.6 dB noise figure
    • 17.7 dB associated gain
    • Lead-free option available

    Application Scenarios

    ATF-55143-TR1G has various applications which include:

    • Low noise amplifier for cellular/PCS handsets
    • LNA for WLAN, WLL/RLL and MMDS applications
    • General-purpose discrete E-PHEMT for other ultra-low noise applications

    Comparison

    The pros and cons of ATF-55143-TR1G are:

    Advantages
    • High gain, high linearity and low noise
    • Single Supply Enhancement Mode Technology boosts its performance
    • Very low noise figure, excellent uniformity in product specifications and associated gain enhance its signal quality
    • Low cost
    Disadvantages
    • May not be ideal for applications beyond the 450 MHz to 6 GHz frequency range
  • Similar parts: 800 , Click to view
    Attributes Value
    Category RF FETs
    Manufacturer Broadcom Limited
    Product Category RF FETs
    Product-Category RF JFET Transistors
    RoHS Details
    Brand Broadcom / Avago
    Transistor-Type EpHEMT
    Technology GaAs
    Gain 17.7 dB
    Transistor-Polarity N-Channel
    Vds-Drain-Source-Breakdown-Voltage 5 V
    Vgs-Gate-Source-Breakdown-Voltage - 5 V to 1 V
    Id-Continuous-Drain-Current 100 mA
    Maximum-Operating-Temperature + 150 C
    Pd-Power-Dissipation 270 mW
    Mounting-Style SMD/SMT
    Package-Case SOT-343
    Packaging Reel
    Configuration Single Dual Source
    Forward-Transconductance-Min 220 mmho
    NF-Noise-Figure 0.6 dB
    Operating-Frequency 2 GHz
    P1dB-Compression-Point 14.4 dBm
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download ATF-55143-TR1G
  • Chipdatas Part: CD91-ATF-55143-TR1G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/26 06:58 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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