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MRF8P26080HS - Brand New Freescale / NXP RF FETs - Datasheet - Chipdatas

MRF8P26080HS - Brand New Freescale / NXP RF FETs

In Stock:157 ,Ready for Immediate Shipping
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In Stock: 157, Ready for Immediate Shipping
Kategorie:RF FETs
Chipdatas Teilenummer:CD86-MRF8P26080HS
Hersteller-Teile-Nr.:MRF8P26080HS
Datumscode:09+
Paket:SMD
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  • Description

    The MRF8P26080HS is an RF Power Field Effect Transistor designed for CDMA and multicarrier base station applications in the frequency range of 1805 to 1880 MHz. It is compatible with both Class AB and Class C modulation formats commonly used in cellular base stations.

    Specifications and features

    • N-Channel Enhancement-Mode Lateral MOSFETs
    • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQA = 800 mA, VGSB = 1.3 V, Pout = 72 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
    • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 280 Watts CW Output Power (2 dB Input Overdrive from Rated Pout)
    • Typical Pout @ 3 dB Compression Point ≃ 280 Watts CW
    • Production Tested in a Symmetrical Doherty Configuration
    • 100% PAR Tested for Guaranteed Output Power Capability
    • Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
    • Internally Matched for Ease of Use
    • Integrated ESD Protection
    • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
    • Designed for Digital Predistortion Error Correction Systems
    • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel

    Application Scenarios

    The MRF8P26080HS is specifically designed for use in CDMA and multicarrier base station applications. It can be used in both Class AB and Class C modulation formats and is suitable for frequencies ranging from 1805 to 1880 MHz.

    Comparison

    Advantages

    - Production tested in a symmetrical Doherty configuration

    - 100% PAR tested for guaranteed output power capability

    - Internally matched for ease of use

    - Integrated ESD protection

    - Greater negative gate-source voltage range for improved Class C operation

    - Designed for digital predistortion error correction systems

    - In tape and reel packaging

    Disadvantages

    No specific disadvantages mentioned

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    Attribute Parameterwert
    Kategorie RF FETs
    Manufacturer Freescale / NXP
    Product Category RF FETs
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
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    Shipping option:
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    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Weitere Informationen
  • Datasheet: Download MRF8P26080HS
  • Chipdaten Teil: CD86-MRF8P26080HS
  • Lagerhaus: China, Hongkong
  • Versenden: Innerhalb von 24 Stunden
  • Kostenloser Versand: Yes
  • Bevorzugter Versand: Yes, 3-5 days
  • Letzte Aktualisierung: 2024/06/28 22:47 +0800
Refund
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    • Vollständige oder teilweise Rückerstattung, wenn der Artikel nicht der Beschreibung entspricht
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