Description

The PD85035-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-E's superior linearity performance makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)

Specifications and features

■ Excellent thermal stability
■ Common source configuration
■ POUT = 35W with 14.9dB gain @ 870MHz / 13.6V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/93/EC European directive

Application Scenarios

The PD85035-E is ideal for high-gain, broadband commercial and industrial applications. It is particularly suited for car mobile radio due to its superior linearity performance.

Comparison

The PD85035-E offers excellent thermal stability, a common source configuration, and a plastic package. It delivers a power output of 35W with a gain of 14.9dB at 870MHz / 13.6V. It also provides ESD protection and is compliant with the 2002/93/EC European directive.

- Excellent thermal stability for reliable performance
- High gain for improved signal reception
- Broadband capability for versatile applications
- Easy assembly and RF performances with the PowerSO-10 plastic package

- Limited operating voltage of 13.6V
- Designed specifically for RF applications