Description

The MRF8S9100HSR3 is an electronic component model in the RF FETs product category. It is a 865-960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET. This component is specifically designed for CDMA base station applications with frequencies from 865 to 960 MHz and can be used in Class AB and Class C for all typical cellular base station modulation formats.

Specifications and features

- Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness.

- Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW.

Application Scenarios

This electronic component is suitable for use in CDMA base station applications with frequencies from 865 to 960 MHz. It can be used in Class AB and Class C for all typical cellular base station modulation formats.

Comparison

Advantages:

• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

Disadvantages: None