MRF8S9260HSR3 - Brand New Freescale / NXP RF FETs
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Product Details
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920-960 MHz, 58 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET
Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
**• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400
mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.**
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 200 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point 200 Watts CWFeatures
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• 225°C Capable Plastic Package
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. -
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Datasheet
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Delivery period:
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- Datasheet: Download MRF8S9260HSR3
- Chipdatas Part: CD93-MRF8S9260HSR3
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/30 16:35 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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