Product Details

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470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET

**Designed for broadband commercial and industrial applications with

frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 32 volt digital television transmitter equipment.**

• Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts, IDQ = 2000 mA, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Drain Efficiency ≥ 21%
ACPR ≤ -58 dBc
• Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts, IDQ = 2000 mA
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Drain Efficiency ≥ 27.5%
IMD ≥ -31.3 dBc
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Device Designed for Push-Pull Operation Only
• Integrated ESD Protection
• Excellent Thermal Stability
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.