MRF5S9101NB - Brand New Freescale / NXP RF FETs
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RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.
GSM Application
• Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout =
100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)
Power Gain - 17.5 dB
Drain Efficiency - 60%GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout =
50 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz)
Power Gain — 18 dB
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 2.3% rms
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 100 W CW Output PowerFeatures
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. -
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Datasheet
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Delivery period:
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- Datasheet: Download MRF5S9101NB
- Chipdatas Part: CD94-MRF5S9101NB
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/30 18:38 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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