RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

GSM Application

• Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout =
100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)
Power Gain - 17.5 dB
Drain Efficiency - 60%

GSM EDGE Application

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout =
50 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz)
Power Gain — 18 dB
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 2.3% rms
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 100 W CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.