Description

This article is about the Electronic Component Model BLF6G22LS-100,112 which belongs to the product category of RF FETs. It is a 100 W LDMOS power transistor primarily designed for base station applications operating at frequencies from 2000 MHz to 2200 MHz.

Specifications and features

The BLF6G22LS-100,112 model offers several features and benefits, including:

• Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz with various power specifications.
• Easy power control.
• Integrated ESD protection.
• Excellent ruggedness.
• High efficiency.
• Designed for broadband operation (2000 MHz to 2200 MHz).
• Internally matched for ease of use.
• Compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).

Application Scenarios

BLF6G22LS-100,112 model is extensively used in RF power amplifiers, W-CDMA base stations, and multi-carrier applications with a frequency range of 2000 MHz to 2200 MHz.

Comparison

• It offers high efficiency.
• It comes with integrated ESD protection.
• It is internally matched for ease of use.
• It is RoHS compliant.

• Its application field is limited to base station applications at frequencies from 2000 MHz to 2200 MHz.
• It is designed for specific broadband operation.