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QS6M3TR - Brand New Rohm Semiconductor FETs - Arrays - Datasheet - Chipdatas

QS6M3TR - Brand New Rohm Semiconductor FETs - Arrays

In Stock:15992 ,Ready for Immediate Shipping
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In Stock: 15992, Ready for Immediate Shipping
Category:FETs - Arrays
Chipdatas Part No.:CD93-QS6M3TR
Manufacturer Part No.:QS6M3TR
Datecode:09+
Package: SOT-23-6 Thin, TSOT-23-6
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  • Description

    This article is about the electronic component model QS6M3TR under the FETs - Arrays product category. QS6M3TR is a MOSFET, part of the Small Signal MOSFET Series, Middle Power MOSFET Series, and Power MOSFET Series. Additionally, this model includes a Selector Guide for Automotive MOSFETs (AEC-Q101), Bipolar Transistors (Surface mount type), Transistor Array, Complex Bipolar Transistors, Digital Transistors, Complex Digital Transistors, Packages, and Part No. Explanation. The QS6M3TR is ISO/TS 16949-approved.

    Specifications and features

    • Product Category: FETs - Arrays
    • Type: MOSFET

    Application Scenarios

    This model can be used in various electronic devices and applications where MOSFET is a suitable component. It is commonly used in small signal and middle power applications in the automotive industry, digital circuits, and switching power supplies.

    Comparison

    Advantages
    • ISO/TS 16949-approved
    • Can be used in a wide range of electronic applications
    • Included Selector Guide for Automotive MOSFETs (AEC-Q101) simplifies the selection process for automotive applications
    Disadvantages
    • No specific disadvantage found.
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer Rohm Semiconductor
    Product Category FETs - Arrays
    Series QS6M3
    Packaging Alternate Packaging
    Mounting-Style SMD/SMT
    Package-Case SC-74, SOT-457
    Technology Si
    Operating-Temperature 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package TSMT6
    Configuration 1 N-Channel 1 P-Channel
    FET-Type N and P-Channel
    Power-Max 1.25W
    Transistor-Type 1 N-Channel 1 P-Channel
    VDSS – Drain-Source Voltage 30V, 20V
    Input Capacitance 80pF @ 10V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 1.5A
    Rds-On-Max-Id-Vgs 230 mOhm @ 1.5A, 4.5V
    Vgs-th-Max-Id 1.5V @ 1mA
    Gate-Charge-Qg-Vgs 1.6nC @ 4.5V
    Pd-Power-Dissipation 1.25 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 18 ns 12 ns
    Rise-Time 18 ns 12 ns
    Vgs-Gate-Source-Voltage 12 V
    ID (drain current) 1.5 A
    Vds-Drain-Source-Breakdown-Voltage 30 V - 20 V
    Rds-On-Drain-Source-Resistance 260 mOhms
    Transistor-Polarity N-Channel P-Channel
    Typical-Turn-Off-Delay-Time 15 ns 45 ns
    Turn-On Delay Time 7 ns 10 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

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    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download QS6M3TR
  • Chipdatas Part: CD93-QS6M3TR
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 17:47 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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