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Si1965DH-T1-GE3 - Brand New ROHM FETs - Arrays - Datasheet - Chipdatas

Si1965DH-T1-GE3 - Brand New ROHM FETs - Arrays

In Stock:6416 ,Ready for Immediate Shipping
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In Stock: 6416, Ready for Immediate Shipping
Brand:ROHM
Category:FETs - Arrays
Chipdatas Part No.:CD92-Si1965DH-T1-GE3
Manufacturer Part No.:Si1965DH-T1-GE3
Datecode:09+
Package:6-TSSOP, SC-88, SOT-363
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  • Description

    The Si1965DH-T1-GE3 is an electronic component belonging to the FETs - Arrays category. It is a power MOSFET transistor designed to switch and amplify high-power signals in a variety of electrical circuits.

    Specifications and features

    • Package / Case: PowerPAK SO-8
    • Mounting Style: SMD/SMT
    • Number of Channels: 1 Channel
    • Vds - Drain-Source Breakdown Voltage: 20 V
    • Id - Continuous Drain Current: 3.2 A
    • Rds On - Drain-Source Resistance: 78 mOhms
    • Transistor Polarity: N-Channel
    • Vgs th - Gate-Source Threshold Voltage: 1 V to 2 V
    • Power Dissipation: 2.5 W

    Application Scenarios

    The Si1965DH-T1-GE3 can be used in a wide range of applications, including power supplies, DC/DC converters, motor control circuits, and LED lighting systems.

    Comparison

    Advantages
    • Low Rds On for efficient power management
    • Fast switching speed for quick response times
    • Small form factor for space-saving designs
    • Excellent thermal management capabilities for improved reliability
    Disadvantages
    • Maximum drain-source voltage may not be sufficient for some high voltage applications
    • May require additional protective circuitry to prevent damage from power surges or electrostatic discharge
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer ROHM
    Product Category FETs - Arrays
    Series TrenchFET®
    Packaging Alternate Packaging
    Part-Aliases SI1905DL-T1-GE3 SI1917EDH-T1-GE3
    Unit-Weight 0.000988 oz
    Mounting-Style SMD/SMT
    Package-Case 6-TSSOP, SC-88, SOT-363
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package SC-70-6 (SOT-363)
    Configuration Dual
    FET-Type 2 P-Channel (Dual)
    Power-Max 1.25W
    Transistor-Type 2 P-Channel
    VDSS – Drain-Source Voltage 12V
    Input Capacitance 120pF @ 6V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 1.3A
    Rds-On-Max-Id-Vgs 390 mOhm @ 1A, 4.5V
    Vgs-th-Max-Id 1V @ 250μA
    Gate-Charge-Qg-Vgs 4.2nC @ 8V
    Pd-Power-Dissipation 740 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 10 ns
    Rise-Time 27 ns
    Vgs-Gate-Source-Voltage 8 V
    ID (drain current) 1.14 A
    Vds-Drain-Source-Breakdown-Voltage - 12 V
    Vgs-th-Gate-Source-Threshold-Voltage - 1 V
    Rds-On-Drain-Source-Resistance 390 mOhms
    Transistor-Polarity P-Channel
    Typical-Turn-Off-Delay-Time 15 ns
    Turn-On Delay Time 12 ns
    Qg-Gate-Charge 2.8 nC
  • Latest 5 Reviews
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download Si1965DH-T1-GE3
  • Chipdatas Part: CD92-Si1965DH-T1-GE3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/12 12:33 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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