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SI1926DL-T1-GE3 - Brand New ROHM FETs - Arrays - Datasheet - Chipdatas

SI1926DL-T1-GE3 - Brand New ROHM FETs - Arrays

In Stock:9417 ,Ready for Immediate Shipping
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In Stock: 9417, Ready for Immediate Shipping
Brand:ROHM
Category:FETs - Arrays
Chipdatas Part No.:CD93-SI1926DL-T1-GE3
Manufacturer Part No.:SI1926DL-T1-GE3
Datecode:09+
Package:6-TSSOP, SC-88, SOT-363
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  • Description

    SI1926DL-T1-GE3 is an electronic component model, which belongs to the category of FETs - Arrays. It is a powerful and versatile device commonly used in electronic circuits and applications for its excellent characteristics and features.

    Specifications and features

    - Drain to Source Voltage: 20V
    - Current - Continuous Drain (Id) @ 25°C : 5.9A (Ta)
    - Rds On (Max) @ Id, Vgs : 8.5 mOhm @ 5.9A, 4.5V
    - Input Capacitance (Ciss) @ Vds : 487pF @ 10V
    - Power - Max : 2W
    - Packaging : DFN-8
    - Configuration : Dual
    - FET Type : 2 N-Channel (Dual)
    - Mounting Type : Surface Mount
    - Operating Temperature : -55°C ~ 150°C

    Application Scenarios

    This electronic component model can be used in various electronic applications such as: - Power management in portable devices - DC-DC converters - LED lighting

    Comparison

    Advantages: - High input capacitance for better performance in electronic applications - Dual configuration for more flexibility - Low Rds On for lower power consumption Disadvantages: - Maximum power of 2W may not be sufficient for high-power applications
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer ROHM
    Product Category FETs - Arrays
    Series TrenchFET®
    Packaging Tape & Reel (TR)
    Unit-Weight 0.000988 oz
    Mounting-Style SMD/SMT
    Package-Case 6-TSSOP, SC-88, SOT-363
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package SC-70-3 (SOT323)
    Configuration Dual
    FET-Type 2 N-Channel (Dual)
    Power-Max 510mW
    Transistor-Type 2 N-Channel
    VDSS – Drain-Source Voltage 60V
    Input Capacitance 18.5pF @ 30V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 370mA
    Rds-On-Max-Id-Vgs 1.4 Ohm @ 340mA, 10V
    Vgs-th-Max-Id 2.5V @ 250μA
    Gate-Charge-Qg-Vgs 1.4nC @ 10V
    Pd-Power-Dissipation 510 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 370 mA
    Vds-Drain-Source-Breakdown-Voltage 60 V
    Rds-On-Drain-Source-Resistance 1.4 Ohms
    Transistor-Polarity N-Channel
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
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    Shipping option:
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    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Contact us
Additional Information
  • Datasheet: Download SI1926DL-T1-GE3
  • Chipdatas Part: CD93-SI1926DL-T1-GE3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/12 22:15 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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  • We recommend to use bank transfer for large orders to save on handling fees.
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