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SI3932DV-T1-GE3 - Brand New VISHAY FETs - Arrays - Datasheet - Chipdatas

SI3932DV-T1-GE3 - Brand New VISHAY FETs - Arrays

In Stock:10229 ,Ready for Immediate Shipping
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In Stock: 10229, Ready for Immediate Shipping
Brand:VISHAY
Category:FETs - Arrays
Chipdatas Part No.:CD92-SI3932DV-T1-GE3
Manufacturer Part No.:SI3932DV-T1-GE3
Datecode:09+
Package:SOT-163
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  • Description

    This is a model of Electronic components, specifically a FETs-Array called SI3932DV-T1-GE3. The model has different features such as TrenchFET power MOSFET technology and is 100% Rg tested. Its applications are versatile, which makes it a suitable load switch for portable applications and DC/DC converters.

    Specifications and features

    • Model: SI3932DV-T1-GE3
    • Category: FETs - Arrays
    • Technology: TrenchFET power MOSFET
    • Rg tested: 100%

    Application Scenarios

    The SI3932DV-T1-GE3 model is ideal for the following applications:

    • Load switch for portable applications
    • DC/DC converters

    Comparison

    Advantages
    • The TrenchFET power MOSFET technology makes it a reliable and efficient model.
    • The 100% Rg tested feature ensures that the model is fully functional.
    • It is suitable for various applications, making it versatile.
    Disadvantages
    • No known disadvantages have been reported for this model.
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer VISHAY
    Product Category FETs - Arrays
    Series TrenchFET®
    Packaging Alternate Packaging
    Part-Aliases SI3932DV-GE3
    Unit-Weight 0.000705 oz
    Mounting-Style SMD/SMT
    Package-Case SOT-23-6 Thin, TSOT-23-6
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package 6-TSOP
    Configuration Dual
    FET-Type 2 N-Channel (Dual)
    Power-Max 1.4W
    Transistor-Type 2 N-Channel
    VDSS – Drain-Source Voltage 30V
    Input Capacitance 235pF @ 15V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 3.7A
    Rds-On-Max-Id-Vgs 58 mOhm @ 3.4A, 10V
    Vgs-th-Max-Id 2.2V @ 250μA
    Gate-Charge-Qg-Vgs 6nC @ 10V
    Pd-Power-Dissipation 1.4 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    ID (drain current) 3.7 A
    Vds-Drain-Source-Breakdown-Voltage 30 V
    Rds-On-Drain-Source-Resistance 47 mOhms
    Transistor-Polarity N-Channel
    Qg-Gate-Charge 3.7 nC
    Transconductance 10 S
  • Latest 5 Reviews
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
    • - Automatic Email notification (above 5 times)
    • - View in your order page
    Shipping option:
    DHL, FedEx, EMS, SF Express, and Registered Air Mail
    Shipping tracking:
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    How to Buy:
    • - In-stock, Add to cart > Check out > Submit order > Complete payment >Delivery.
    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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    Payment:
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    • - Wire transfer, include Local bank transfer.
    • - Western Union.
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Contact us
Additional Information
  • Datasheet: Download SI3932DV-T1-GE3
  • Chipdatas Part: CD92-SI3932DV-T1-GE3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/24 21:44 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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  • The fee is charged according to the rule of PayPal.
  • Western Union charge US$0.00 banking fee.
  • We recommend to use bank transfer for large orders to save on handling fees.
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