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IRF7389TRPBF - Brand New IR FETs - Arrays - Datasheet - Chipdatas

IRF7389TRPBF - Brand New IR FETs - Arrays

In Stock:1293 ,Ready for Immediate Shipping
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In Stock: 1293, Ready for Immediate Shipping
Brand:IR
Category:FETs - Arrays
Chipdatas Part No.:CD92-IRF7389TRPBF
Manufacturer Part No.:IRF7389TRPBF
Datecode:09+
Package:SOP
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  • Description

    The IRF7389TRPBF is a power MOSFET transistor for electronic circuits requiring low Rds(on) characteristics. It belongs to the FETs- Arrays product category and has a compact structure suitable for high-density mounting.

    Specifications and features

    • Transistor Type: NDT, MOSFET
    • Current Rating: 6.4 A
    • Drain-Source Voltage VDS: 30 V
    • Gate Charge Qg Vgs: 12 nC @ 10 V
    • On Resistance Rds(on): 4.5 mOhms @ 10 V
    • Power Dissipation Pd: 2 W
    • Transistor Polarity: N-Channel

    Application Scenarios

    The IRF7389TRPBF can be used in a variety of applications such as DC-DC converters, power supplies, and battery protection circuits. The low on-state resistance and high switching performance make it ideal for high-efficiency and high-frequency applications.

    Comparison

    Advantages
    • Low Rds(on) helps to reduce power dissipation and increase efficiency.
    • Compact structure enables high-density mounting.
    • High switching performance makes it suitable for high-frequency applications.
    Disadvantages
    • Low voltage rating may limit its use in some high-voltage applications.
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer IR
    Product Category FETs - Arrays
    Series HEXFET®
    Packaging Alternate Packaging
    Unit-Weight 0.019048 oz
    Mounting-Style SMD/SMT
    Package-Case 8-SOIC (0.154", 3.90mm Width)
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package 8-SO
    Configuration 1 N-Channel 1 P-Channel
    FET-Type N and P-Channel
    Power-Max 2.5W
    Transistor-Type 1 N-Channel 1 P-Channel
    VDSS – Drain-Source Voltage 30V
    Input Capacitance 650pF @ 25V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C -
    Rds-On-Max-Id-Vgs 29 mOhm @ 5.8A, 10V
    Vgs-th-Max-Id 1V @ 250μA
    Gate-Charge-Qg-Vgs 33nC @ 10V
    Pd-Power-Dissipation 2.5 W
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 7.3 A
    Vds-Drain-Source-Breakdown-Voltage 30 V
    Rds-On-Drain-Source-Resistance 46 mOhms
    Transistor-Polarity N-Channel P-Channel
    Qg-Gate-Charge 22 nC
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download IRF7389TRPBF
  • Chipdatas Part: CD92-IRF7389TRPBF
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/24 20:34 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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