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DMN32D2LDF-7-80 - Brand New Diodes Incorporated FETs - Arrays - Datasheet - Chipdatas

DMN32D2LDF-7-80 - Brand New Diodes Incorporated FETs - Arrays

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Category:FETs - Arrays
Chipdatas Part No.:CD92-DMN32D2LDF-7-80
Manufacturer Part No.:DMN32D2LDF-7-80
Datecode:09+
Package:SOT-353
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  • Description

    This product is an Electronic Component Model DMN32D2LDF-7-80, belonging to the FETs-arrays product category. It is a Common Source Dual N-Channel MOSFET that has various features and capabilities, making it a reliable choice for different applications.

    Specifications and features

    Features:

    • Common Source Dual N-Channel MOSFET
    • Low On-Resistance
    • Very Low Gate Threshold Voltage, 1.2V max
    • Low Input Capacitance
    • Fast Switching Speed
    • Low Input/Output Leakage
    • Small Surface Mount Package
    • ESD Protected Gate
    • Lead Free By Design/RoHS Compliant (Note 2)
    • "Green" Device (Note 3)
    • Qualified to AEC-Q 101 Standards for High Reliability

    Application Scenarios

    This Electronic Component Model DMN32D2LDF-7-80 can be utilized in various applications, such as laptops, computers, mobile devices, and other electronic devices to improve their performance.

    Comparison

    Advantages
    • Low on-resistance and low gate threshold voltage result in low power consumption and high efficiency.
    • Fast switching speed ensures reliable performance.
    • ESD protection and AEC-Q 101 standard certification ensure high durability and reliability.
    Disadvantages
    • No apparent disadvantages were observed from the product description.
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer Diodes Incorporated
    Product Category FETs - Arrays
    Series DMN32
    Packaging Alternate Packaging
    Mounting-Style SMD/SMT
    Package-Case 5-TSSOP, SC-70-5, SOT-353
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package SOT-353
    Configuration Dual Common Source
    FET-Type 2 N-Channel (Dual) Common Source
    Power-Max 280mW
    Transistor-Type 2 N-Channel
    VDSS – Drain-Source Voltage 30V
    Input Capacitance 39pF @ 3V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 400mA
    Rds-On-Max-Id-Vgs 1.2 Ohm @ 100mA, 4V
    Vgs-th-Max-Id 1.2V @ 250μA
    Gate-Charge-Qg-Vgs -
    Pd-Power-Dissipation 280 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Vgs-Gate-Source-Voltage 10 V
    ID (drain current) 400 mA
    Vds-Drain-Source-Breakdown-Voltage 30 V
    Rds-On-Drain-Source-Resistance 1.2 Ohms
    Transistor-Polarity N-Channel
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
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    Shipping option:
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    Shipping tracking:
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    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Contact us
Additional Information
  • Datasheet: Download DMN32D2LDF-7-80
  • Chipdatas Part: CD92-DMN32D2LDF-7-80
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 17:02 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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    SOT-353
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  • The fee is charged according to the rule of PayPal.
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