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SI4916DY-T1-GE3 - Brand New ROHM FETs - Arrays - Datasheet - Chipdatas

SI4916DY-T1-GE3 - Brand New ROHM FETs - Arrays

In Stock:42824 ,Ready for Immediate Shipping
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In Stock: 42824, Ready for Immediate Shipping
Brand:ROHM
Category:FETs - Arrays
Chipdatas Part No.:CD94-SI4916DY-T1-GE3
Manufacturer Part No.:SI4916DY-T1-GE3
Datecode:09+
Package:8-SOIC 0.154", 3.90mm Width
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  • Description

    The SI4916DY-T1-GE3 is an electronic component model that belongs to the category of FETs - Arrays. This model offers a range of features and specifications that make it suitable for various applications.

    Specifications and features

    The SI4916DY-T1-GE3 is designed to deliver high performance and efficiency. It has a voltage rating of None and a current rating of None. This model also offers None protection features to ensure safe operation.

    Application Scenarios

    The SI4916DY-T1-GE3 is commonly used in None applications. It can be utilized in None systems and None circuits.

    Comparison

    One of the advantages of the SI4916DY-T1-GE3 is its None efficiency, which makes it ideal for None applications. However, one disadvantage is None.
    Advantages
    - High performance and efficiency - Voltage and current ratings - Protection features
    Disadvantages
    - None
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer ROHM
    Product Category FETs - Arrays
    Series LITTLE FOOT®
    Packaging Tape & Reel (TR)
    Part-Aliases SI4916DY-GE3
    Unit-Weight 0.006596 oz
    Mounting-Style SMD/SMT
    Package-Case 8-SOIC (0.154", 3.90mm Width)
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package 8-SO
    Configuration Dual with Schottky Diode
    FET-Type 2 N-Channel (Half Bridge)
    Power-Max 3.3W, 3.5W
    Transistor-Type 2 N-Channel
    VDSS – Drain-Source Voltage 30V
    Input Capacitance -
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 10A, 10.5A
    Rds-On-Max-Id-Vgs 18 mOhm @ 10A, 10V
    Vgs-th-Max-Id 3V @ 250μA
    Gate-Charge-Qg-Vgs 10nC @ 4.5V
    Pd-Power-Dissipation 1.9 W 2 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 7.5 A
    Vds-Drain-Source-Breakdown-Voltage 30 V
    Rds-On-Drain-Source-Resistance 18 mOhms
    Transistor-Polarity N-Channel
  • Latest 5 Reviews
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
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    • - View in your order page
    Shipping option:
    DHL, FedEx, EMS, SF Express, and Registered Air Mail
    Shipping tracking:
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    How to Buy:
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    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Contact us
Additional Information
  • Datasheet: Download SI4916DY-T1-GE3
  • Chipdatas Part: CD94-SI4916DY-T1-GE3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/30 07:37 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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Payment Method
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  • The fee is charged according to the rule of PayPal.
  • Western Union charge US$0.00 banking fee.
  • We recommend to use bank transfer for large orders to save on handling fees.
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