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ZXMHC10A07T8TA - Brand New Diodes Incorporated FETs - Arrays - Datasheet - Chipdatas
ZXMHC10A07T8TA
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ZXMHC10A07T8TA - Brand New Diodes Incorporated FETs - Arrays

In Stock:8053 ,Ready for Immediate Shipping
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In Stock: 8053, Ready for Immediate Shipping
Brand:Diodes Incorporated
Category:FETs - Arrays
Chipdatas Part No.:CD91-ZXMHC10A07T8TA
Manufacturer Part No.:ZXMHC10A07T8TA
Datecode:09+
Package:SOT-223-8
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  • Description

    The ZXMHC10A07T8TA is a FETs-Arrays component. It is a Power MOSFET module that is rated for 100V, 7A continuous drain current at 25°C, with a fast-switching speed of 10nS. This component is commonly used as a switching element in DC-DC converters and power supplies.

    Specifications and features

    • Category: FETs - Arrays
    • Max Voltage: 100V
    • Max Continuous Drain Current: 7A
    • Switching Speed: 10nS

    Application Scenarios

    The ZXMHC10A07T8TA can be used in a variety of applications, including:

    • DC-DC Converters
    • Power Supplies
    • PWM Applications
    • Motor Control

    Comparison

    Advantages
    • Fast-switching speed
    • High maximum voltage rating
    • Low on-resistance
    Disadvantages
    • Current handling limited to 7A
    • May not be suitable for high power applications
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer Diodes Incorporated
    Product Category FETs - Arrays
    Series ZXMHC10
    Packaging Alternate Packaging
    Mounting-Style SMD/SMT
    Package-Case SOT-223-8
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 4 Channel
    Supplier-Device-Package SM8
    Configuration Half-Bridge
    FET-Type 2 N and 2 P-Channel (H-Bridge)
    Power-Max 1.3W
    Transistor-Type 2 N-Channel 2 P-Channel
    VDSS – Drain-Source Voltage 100V
    Input Capacitance 138pF @ 60V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 1A, 800mA
    Rds-On-Max-Id-Vgs 700 mOhm @ 1.5A, 10V
    Vgs-th-Max-Id 4V @ 250μA
    Gate-Charge-Qg-Vgs 2.9nC @ 10V
    Pd-Power-Dissipation 1.3 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 2.1 ns 3.3 ns
    Rise-Time 1.5 ns 2.1 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 1.1 A
    Vds-Drain-Source-Breakdown-Voltage 100 V
    Vgs-th-Gate-Source-Threshold-Voltage 2 V
    Rds-On-Drain-Source-Resistance 700 mOhms 1 Ohms
    Transistor-Polarity N-Channel P-Channel
    Typical-Turn-Off-Delay-Time 4.1 ns 5.9 ns
    Turn-On Delay Time 1.8 ns 1.6 ns
    Qg-Gate-Charge 2.9 nC 3.5 nC
    Transconductance 1.6 S 1.2 S
    Channel-Mode Enhancement
  • Datasheet
    Not found or temporary maintenance
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

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Contact us
Additional Information
  • Datasheet: Download ZXMHC10A07T8TA
  • Chipdatas Part: CD91-ZXMHC10A07T8TA
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/12 23:55 +0800
Refund
  • View Policy
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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