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FDMQ8203 - Brand New onsemi FETs - Arrays - Datasheet - Chipdatas
FDMQ8203
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FDMQ8203 - Brand New onsemi FETs - Arrays

In Stock:53125 ,Ready for Immediate Shipping
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In Stock: 53125, Ready for Immediate Shipping
Brand:onsemi
Category:FETs - Arrays
Chipdatas Part No.:CD93-FDMQ8203
Manufacturer Part No.:FDMQ8203
Datecode:09+
Package:12-WDFN Exposed Pad
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PCS

  • Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)
    Digi-Key

    Trans MOSFET N/P-CH Si 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R
    Arrow

    MOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
    Mouser

  • Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)
    Digi-Key

    Trans MOSFET N/P-CH Si 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R
    Arrow

    MOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
    Mouser

  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer onsemi
    Product Category FETs - Arrays
    Series GreenBridge™ PowerTrench®
    Packaging Alternate Packaging
    Unit-Weight 0.007408 oz
    Mounting-Style SMD/SMT
    Package-Case 12-WDFN Exposed Pad
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package 12-MLP (5x4.5)
    Configuration 1 N-Channel 1 P-Channel
    FET-Type 2 N and 2 P-Channel (H-Bridge)
    Power-Max 2.5W
    Transistor-Type 1 N-Channel 1 P-Channel
    VDSS – Drain-Source Voltage 100V, 80V
    Input Capacitance 210pF @ 50V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 3.4A, 2.6A
    Rds-On-Max-Id-Vgs 110 mOhm @ 3A, 10V
    Vgs-th-Max-Id 4V @ 250μA
    Gate-Charge-Qg-Vgs 5nC @ 10V
    Pd-Power-Dissipation 2.5 W
    Maximum Operating Temperature + 125 C
    Fall-Time 1.9 ns 2.7 ns
    Rise-Time 1.3 ns 2.8 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 6 A - 6 A
    Vds-Drain-Source-Breakdown-Voltage 100 V - 80 V
    Vgs-th-Gate-Source-Threshold-Voltage 3 V - 1.6 V
    Rds-On-Drain-Source-Resistance 110 mOhms 190 mOhms
    Transistor-Polarity N-Channel P-Channel
    Qg-Gate-Charge 2.9 nC 13 nC
    Transconductance 6 S
  • Datasheet
    Not found or temporary maintenance
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    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download FDMQ8203
  • Chipdatas Part: CD93-FDMQ8203
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 11:27 +0800
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