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SI7998DP-T1-GE3 - Brand New ROHM FETs - Arrays - Datasheet - Chipdatas

SI7998DP-T1-GE3 - Brand New ROHM FETs - Arrays

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In Stock: 2650, Ready for Immediate Shipping
Brand:ROHM
Category:FETs - Arrays
Chipdatas Part No.:CD93-SI7998DP-T1-GE3
Manufacturer Part No.:SI7998DP-T1-GE3
Datecode:09+
Package:PowerPAK® SO-8 Dual
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  • GENERAL DESCRIPTION

    The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment.
    This device relies on a negative temperature coefficient (NTC) thermistor to sense the temperature of the object attached to the TEC. The target temperature is set with an analog input voltage either from a DAC or an external resistor divider.
    The loop is stabilized by a PID compensation amplifier with high stability and low noise. The compensation network can be adjusted by the user to optimize temperature settling time. The component values for this network can be calculated based on the thermal transfer function of the laser diode or obtained from the lookup table given in the Application Notes section.
    Voltage outputs are provided to monitor both the temperature of the object and the voltage across the TEC. A voltage reference of 2.5 V is also provided.

    FEATURES

    High Efficiency
    Small Size: 5 mm x 5 mm LFCSP
    Low Noise: <0.5% TEC Current Ripple
    Long-Term Temperature Stability: 0.01°C
    Temperature Lock Indication
    Temperature Monitoring Output
    Oscillator Synchronization with an External Signal
    Clock Phase Adjustment for Multiple Controllers
    Programmable Switching Frequency up to 1 MHz
    Thermistor Failure Alarm
    Maximum TEC Voltage Programmability

    APPLICATIONS

    Thermoelectric Cooler (TEC) Temperature Control
    Resistive Heating Element Control
    Temperature Stabilization Substrate (TSS) Control

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    Attributes Value
    Category FETs - Arrays
    Manufacturer ROHM
    Product Category FETs - Arrays
    Series TrenchFET®
    Packaging Alternate Packaging
    Part-Aliases SI7998DP-GE3
    Unit-Weight 0.017870 oz
    Mounting-Style SMD/SMT
    Package-Case PowerPAKR SO-8 Dual
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package PowerPAKR SO-8 Dual
    Configuration Dual Dual Drain
    FET-Type 2 N-Channel (Dual)
    Power-Max 22W, 40W
    Transistor-Type 2 N-Channel
    VDSS – Drain-Source Voltage 30V
    Input Capacitance 1100pF @ 15V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 25A, 30A
    Rds-On-Max-Id-Vgs 9.3 mOhm @ 15A, 10V
    Vgs-th-Max-Id 2.5V @ 250μA
    Gate-Charge-Qg-Vgs 26nC @ 10V
    Pd-Power-Dissipation 3.6 W 4 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 12 ns 10 ns
    Rise-Time 15 ns 17 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 15 A
    Vds-Drain-Source-Breakdown-Voltage 30 V
    Rds-On-Drain-Source-Resistance 9.3 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 22 ns 35 ns
    Turn-On Delay Time 20 ns 26 ns
    Channel-Mode Enhancement
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Additional Information
  • Datasheet: Download SI7998DP-T1-GE3
  • Chipdatas Part: CD93-SI7998DP-T1-GE3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/07/02 08:59 +0800
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    • Full or Partial Refund , If the item is not as described
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