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MRF6S19100HR3 - Brand New Freescale / NXP RF FETs - Datasheet - Chipdatas

MRF6S19100HR3 - Brand New Freescale / NXP RF FETs

In Stock:180 ,Ready for Immediate Shipping
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In Stock: 180, Ready for Immediate Shipping
Category:RF FETs
Chipdatas Part No.:CD93-MRF6S19100HR3
Manufacturer Part No.:MRF6S19100HR3
Datecode:09+
Package:NI-780
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  • Description

    The MRF6S19100HR3 is an RF Power Field Effect Transistor in the N-Channel Enhancement-Mode Lateral MOSFETs category. It is specifically designed for N-CDMA base station applications with frequencies ranging from 1930 to 1990 MHz. This transistor is suitable for TDMA, CDMA, multicarrier amplifier applications, and can be used in Class AB for PCN - PCS/cellular radio and WLL applications.

    Specifications and features

    • Typical 2-Carrier N-CDMA Performance:
      • VDD = 28 Volts
      • IDQ = 900 mA
      • Pout = 22 Watts Avg., Full Frequency Band, IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz
      • PAR = 9.8 dB @ 0.01% Probability on CCDF
      • Power Gain — 16.1 dB
      • Drain Efficiency — 28%
      • IM3 @ 2.5 MHz Offset — -37 dBc @ 1.2288 MHz Channel Bandwidth
      • ACPR @ 885 kHz Offset — -51 dBc @ 30 kHz Channel Bandwidth
      • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
      • Characterized with Series Equivalent Large-Signal Impedance Parameters
      • Internally Input and Output Matched for Ease of Use
      • Qualified Up to a Maximum of 32 VDD Operation
      • Integrated ESD Protection
      • Lower Thermal Resistance Package
      • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
      • Low Gold Plating Thickness on Leads, 40µ″ Nominal
      • Pb-Free and RoHS Compliant
      • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

      Application Scenarios

      The MRF6S19100HR3 is primarily used in N-CDMA base station applications with frequencies from 1930 to 1990 MHz. It is suitable for TDMA, CDMA, multicarrier amplifier applications, and can be used in Class AB for PCN - PCS/cellular radio and WLL applications.

      Comparison

      Advantages
      • Wide frequency range compatibility
      • High power gain
      • Integrated ESD protection
      • Pb-Free and RoHS Compliant
      Disadvantages
      • Lower thermal resistance package
      • Can handle VSWR of up to 10:1
  • Similar parts: 800 , Click to view
    Attributes Value
    Category RF FETs
    Manufacturer NXP USA Inc.
    Product Category RF FETs
    Categories Transistors - FETs, MOSFETs - RF
    Series -
    Packaging Tape & Reel (TR)
    Part-Status Obsolete
    Transistor-Type LDMOS
    Frequency 1.99GHz
    Gain 16.1dB
    Voltage-Test 28V
    Current-Rating -
    Noise-Figure -
    Current-Test 900mA
    Power-Output 22W
    Voltage-Rated 68V
    Package-Case NI-780
    Supplier-Device-Package NI-780
    Base-Part-Number MRF6S19100
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download MRF6S19100HR3
  • Chipdatas Part: CD93-MRF6S19100HR3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 15:04 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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