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CMRDM3575 TR - Brand New Central Semiconductor FETs - Arrays - Datasheet - Chipdatas

CMRDM3575 TR - Brand New Central Semiconductor FETs - Arrays

In Stock:7750 ,Ready for Immediate Shipping
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In Stock: 7750, Ready for Immediate Shipping
Category:FETs - Arrays
Chipdatas Part No.:CD88-CMRDM3575 TR
Manufacturer Part No.:CMRDM3575 TR
Datecode:09+
Package:SOT-963
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  • Description

    The CMRDM3575 TR is an electronic component model categorized as a FETs - Arrays. It is designed for various applications where high-performance electronic components are required.

    Specifications and features

    - Model: CMRDM3575 TR

    - Product Category: FETs - Arrays

    Application Scenarios

    - High-performance electronic devices

    - Power management systems

    - Industrial automation

    Comparison

    The advantages of the CMRDM3575 TR include:

    - High-performance and reliability

    - Wide range of applications

    - Efficient power management

    However, there are also some disadvantages:

    - May require specific technical knowledge for proper usage

    - Higher cost compared to other models

  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer Central Semiconductor
    Product Category FETs - Arrays
    Series CMRDM35
    Packaging Alternate Packaging
    Mounting-Style SMD/SMT
    Package-Case SOT-963
    Technology Si
    Operating-Temperature -65°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package SOT-963
    Configuration 1 N-Channel 1 P-Channel
    FET-Type N and P-Channel
    Power-Max 125mW
    Transistor-Type 1 N-Channel 1 P-Channel
    VDSS – Drain-Source Voltage 20V
    Input Capacitance 9pF @ 15V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 160mA, 140mA
    Rds-On-Max-Id-Vgs 3 Ohm @ 100mA, 4.5V
    Vgs-th-Max-Id 1V @ 250μA
    Gate-Charge-Qg-Vgs 0.46nC @ 4.5V
    Pd-Power-Dissipation 125 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 65 C
    Vgs-Gate-Source-Voltage 8 V
    ID (drain current) 200 mA
    Vds-Drain-Source-Breakdown-Voltage 20 V
    Vgs-th-Gate-Source-Threshold-Voltage 1 V
    Rds-On-Drain-Source-Resistance 20 Ohms
    Transistor-Polarity N-Channel P-Channel
    Typical-Turn-Off-Delay-Time 85 ns 100 ns
    Turn-On Delay Time 25 ns 35 ns
    Qg-Gate-Charge 0.458 nC 0.5 nC
    Transconductance 1.3 S 0.14 S
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
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    • - View in your order page
    Shipping option:
    DHL, FedEx, EMS, SF Express, and Registered Air Mail
    Shipping tracking:
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    How to Buy:
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    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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    Payment:
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    • - Wire transfer, include Local bank transfer.
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Contact us
Additional Information
  • Datasheet: Download CMRDM3575 TR
  • Chipdatas Part: CD88-CMRDM3575 TR
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/29 00:12 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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Payment Method
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  • The fee is charged according to the rule of PayPal.
  • Western Union charge US$0.00 banking fee.
  • We recommend to use bank transfer for large orders to save on handling fees.
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