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MRF5S9080NBR1 - Brand New Freescale / NXP RF FETs - Datasheet - Chipdatas

MRF5S9080NBR1 - Brand New Freescale / NXP RF FETs

In Stock:3136 ,Ready for Immediate Shipping
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In Stock: 3136, Ready for Immediate Shipping
Category:RF FETs
Chipdatas Part No.:CD90-MRF5S9080NBR1
Manufacturer Part No.:MRF5S9080NBR1
Datecode:09+
Package:TO-272BB
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  • Description

    Electronic Component Model: MRF5S9080NBR1 is an RF Power Field Effect Transistor, specifically designed for GSM and GSM EDGE base station applications. It is an N-Channel Enhancement-Mode Lateral MOSFET that operates at frequencies from 869 to 960 MHz. It is suitable for TDMA, CDMA, and multicarrier amplifier applications.

    Specifications and features

    - Typical GSM Performance:
       - VDD = 26 Volts
       - IDQ = 600 mA
       - Pout = 80 Watts CW
       - Power Gain = 18.5 dB
       - Drain Efficiency = 60%

    - Typical GSM EDGE Performance:
       - VDD = 26 Volts
       - IDQ = 550 mA
       - Pout = 36 Watts Avg.
       - Power Gain = 19 dB
       - Drain Efficiency = 42%
       - Spectral Regrowth @ 400 kHz Offset = -63 dBc
       - Spectral Regrowth @ 600 kHz Offset = -78 dBc
       - EVM = 2.5% rms
       - Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW Output Power

    - Other features:
       - Characterized with Series Equivalent Large-Signal Impedance Parameters
       - Internally Matched for Ease of Use
       - Qualified Up to a Maximum of 32 VDD Operation
       - Integrated ESD Protection
       - 200C Capable Plastic Package
       - RoHS Compliant
       - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

    Application Scenarios

    MRF5S9080NBR1 is specifically designed for GSM and GSM EDGE base station applications. It can be used in various telecom and wireless communication systems that require power amplification in the frequency range of 869 to 960 MHz. It is suitable for TDMA, CDMA, and multicarrier amplifier applications.

    Comparison

    Advantages

    - High Power Output: Capable of delivering up to 80 Watts CW output power in GSM applications and 36 Watts Avg. in GSM EDGE applications.

    - Wide Frequency Range: Operates in the frequency range of 869 to 960 MHz, making it suitable for various telecom and wireless communication systems.

    - Excellent Performance: Provides high power gain and good drain efficiency, ensuring efficient power amplification and signal transmission.

    Disadvantages

    - Limited Operating Voltage: Qualified for operation up to a maximum of 32 VDD, which may restrict its use in certain high-power applications.

  • Similar parts: 800 , Click to view
    Attributes Value
    Category RF FETs
    Manufacturer Freescale / NXP
    Product Category RF FETs
    Series MRF5S9080N
    Packaging Reel
    Unit-Weight 0.067412 oz
    Mounting-Style SMD/SMT
    Package-Case TO-272 WB EP
    Technology Si
    Maximum Operating Temperature + 150 C
    Operating temperature range - 65 C
    Vgs-Gate-Source-Voltage - 0.5 V 15 V
    Vds-Drain-Source-Breakdown-Voltage 65 V
    Transistor-Polarity N-Channel
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download MRF5S9080NBR1
  • Chipdatas Part: CD90-MRF5S9080NBR1
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/07/01 07:56 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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