Description

Electronic Component Model: MRF6S19140H is an RF Power Field Effect Transistor (RF FET) designed for N-CDMA base station applications. It operates in the frequency range of 1930 to 1990 MHz and is suitable for TDMA, CDMA, and multicarrier amplifier applications. It can be used in Class AB for PCN - PCS/cellular radio and WLL applications.

Specifications and features

• N-Channel Enhancement-Mode Lateral MOSFETs
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 900 mA
• Power Output: 22 Watts Avg.
• Frequency: 1987 MHz
• Channel Bandwidth: 1.2288 MHz
• Power Gain: 16.1 dB
• Drain Efficiency: 28%
• IM3 @ 2.5 MHz Offset: -37 dBc in 1.2288 MHz Channel Bandwidth
• ACPR @ 885 kHz Offset: -51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Application Scenarios

The MRF6S19140H RF FET is designed for N-CDMA base station applications. It can be used in various applications, such as TDMA, CDMA, multicarrier amplifiers, and Class AB for PCN - PCS/cellular radio and WLL applications.

Comparison

• Designed for N-CDMA base station applications
• Suitable for TDMA, CDMA, and multicarrier applications
• Can be used in Class AB for PCN - PCS/cellular radio and WLL applications
• Can handle high power output
• RoHS compliant

• None identified