BLS6G2731S-130,112 - Brand New RF FETs
In Stock:884 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
884,
Ready for Immediate Shipping
Category:RF FETs
Chipdatas Part No.:CD90-BLS6G2731S-130,112
Manufacturer Part No.:BLS6G2731S-130,112
Datecode:09+
Package:SOT922-1
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Description
Electronic Component Model: BLS6G2731S-130,112 is a 130W LDMOS power transistor designed specifically for radar applications in the 2.7 GHz to 3.1 GHz range.Specifications and features
- Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: - Output power = 130 W - Power gain = 12 dB - Efficiency = 50 % - Easy power control - Integrated ESD protection - High flexibility with respect to pulse formats - Excellent ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (2.7 GHz to 3.1 GHz) - Internally matched for ease of use - Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/ECApplication Scenarios
- S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency rangeComparison
Advantages- 130 W output power - 12 dB power gain - 50% efficiency - Easy power control - Integrated ESD protection - High flexibility with respect to pulse formats - Excellent ruggedness - High efficiency - Excellent thermal stability - Design for broadband operationDisadvantagesNone mentioned. -
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Additional Information
- Datasheet: Download BLS6G2731S-130,112
- Chipdatas Part: CD90-BLS6G2731S-130,112
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/07/01 07:47 +0800
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- Full or Partial Refund , If the item is not as described
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