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MRF5S21090HR3 - Brand New Texas Instruments RF FETs - Datasheet - Chipdatas

MRF5S21090HR3 - Brand New Texas Instruments RF FETs

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In Stock: 885, Ready for Immediate Shipping
Category:RF FETs
Chipdatas Part No.:CD93-MRF5S21090HR3
Manufacturer Part No.:MRF5S21090HR3
Datecode:09+
Package:NI-780
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  • Description

    Electronic Component Model: MRF5S21090HR3

    Product Category: RF FETs

    RF Power Field Effect Transistors - N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. Can be used in Class AB for PCN - PCS/cellular radio and WLL applications.

    Specifications and features

    Typical 2-carrier W-CDMA Performance:

    • VDD = 28 Volts, IDQ = 850 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
    • Power Gain — 14.5 dB
    • Drain Efficiency — 26%
    • IM3 @ 10 MHz Offset — -37.5 dBc @ 3.84 MHz Channel Bandwidth
    • ACPR @ 5 MHz Offset — -40.5 dBc @ 3.84 MHz Channel Bandwidth
    • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power
    • Characterized with Series Equivalent Large-Signal Impedance Parameters
    • Internally Matched, Controlled Q, for Ease of Use
    • Qualified Up to a Maximum of 32 VDD Operation
    • Integrated ESD Protection
    • Lower Thermal Resistance Package
    • Low Gold Plating Thickness on Leads, 40µ″ Nominal
    • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

    Application Scenarios

    This electronic component model is commonly used in W-CDMA base stations with frequencies from 2110 to 2170 MHz. It is suitable for TDMA, CDMA, and multicarrier amplifier applications. Additionally, it can be used in Class AB for PCN - PCS/cellular radio and WLL applications.

    Comparison

    Advantages

    - Can handle 10:1 VSWR

    - Integrated ESD protection

    - Lower thermal resistance package

    Disadvantages

    - None mentioned

  • Similar parts: 800 , Click to view
    Attributes Value
    Category RF FETs
    Manufacturer NXP USA Inc.
    Product Category RF FETs
    Categories Transistors - FETs, MOSFETs - RF
    Series -
    Packaging Tape & Reel (TR)
    Part-Status Obsolete
    Transistor-Type LDMOS
    Frequency 2.11GHz
    Gain 14.5dB
    Voltage-Test 28V
    Current-Rating -
    Noise-Figure -
    Current-Test 850mA
    Power-Output 19W
    Voltage-Rated 65V
    Package-Case NI-780
    Supplier-Device-Package NI-780
    Base-Part-Number MRF5S21090
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

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    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download MRF5S21090HR3
  • Chipdatas Part: CD93-MRF5S21090HR3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 15:58 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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