Description

The MRF5S4140HS is an N-channel enhancement-mode lateral MOSFET designed for RF power field effect transistor applications. Specifically, this model is suitable for W-CDMA base station applications at frequencies ranging from 2110 to 2170 MHz. It is recommended to be used in Class AB for PCN-PCS/cellular radio and WLL applications. This MOSFET is internally matched and has controlled Q for ease of use. It also features high gain, high efficiency, high linearity, and integrated ESD protection. The MRF5S4140HS is designed for maximum gain and insertion phase flatness. It is capable of handling 10:1 VSWR, with 28 Vdc, 2140 MHz and 92 Watts CW output power. This MOSFET model also exhibits excellent thermal stability and has been characterized with series equivalent large-signal impedance parameters.

Specifications and features

• Product Category: RF FETs
• Manufacturer: NXP Semiconductors
• RoHS: Yes
• Supply Voltage (VDS): 32 V
• Input Capacitance (Ciss) @ Vds: 680 pF @ 20 V
• Operating Frequency: 2110 MHz to 2170 MHz
• Power - Output: 35 W
• Test Frequency: 2135 MHz, 2145 MHz
• Typical Input Capacitance: 650 pF
• Typical Output Capacitance: 70 pF
• Typical Voltage Gain: 13.5 dB

Application Scenarios

The MRF5S4140HS can be used in various amplifier applications such as TDMA, CDMA, and multicarrier amplifiers. It is suitable for W-CDMA base station applications and can be used in Class AB for PCN-PCS/cellular radio and WLL applications.

Comparison

• High gain, efficiency, and linearity
• Internally matched and controlled Q for ease of use
• Integrated ESD protection
• Capable of handling 10:1 VSWR
• Excellent thermal stability
• Designed for maximum gain and insertion phase flatness

None found.