BLF8G22LS-160BV - Brand New NXP Semiconductors RF FETs
In Stock:34936 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
34936,
Ready for Immediate Shipping
Brand:NXP Semiconductors
Category:RF FETs
Chipdatas Part No.:CD86-BLF8G22LS-160BV
Manufacturer Part No.:BLF8G22LS-160BV
Datecode:09+
Package:SOT1120B
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Description
The BLF8G22LS-160BV is a 160W LDMOS power transistor used in RF FETs product category. It is specially designed for base station applications at frequencies ranging from 2000 MHz to 2200 MHz. This electronic component model has an improved video bandwidth feature.
Specifications and features
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth (100 MHz typical)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Integrated current sense
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Application Scenarios
The BLF8G22LS-160BV RF power amplifier is ideal for W-CDMA base stations and multi-carrier applications in the 2000 MHz to 2200 MHz frequency range.
Comparison
Advantages- Improved video bandwidth
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
Disadvantages- None to note
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Datasheet
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Shopping guide
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Additional Information
- Datasheet: Download BLF8G22LS-160BV
- Chipdatas Part: CD86-BLF8G22LS-160BV
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/28 09:48 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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