Description

Electronic Component Model: MRF18085A is an RF Power Field Effect Transistor designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. It is suitable for TDMA, CDMA, and multicarrier amplifier applications. This model is to be used in Class AB for PCN-PCS/cellular radio and WLL applications. It is specified for GSM-GSM EDGE 1805-1880 MHz.

Specifications and features

- Power Gain: 15 dB (Typ) @ 85 Watts CW - Efficiency: 52% (Typ) @ 85 Watts CW - Internally Matched, Controlled Q, for Ease of Use - High Gain, High Efficiency, and High Linearity - Integrated ESD Protection - Designed for Maximum Gain and Insertion Phase Flatness - Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1805 MHz - Excellent Thermal Stability - Characterized with Series Equivalent Large-Signal Impedance Parameters - Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. - Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

Application Scenarios

MRF18085A is specifically designed for GSM and GSM EDGE base station applications. It is suitable for TDMA, CDMA, and multicarrier amplifier applications. It can be used in Class AB for PCN-PCS/cellular radio and WLL applications. The specified frequency range for this model is GSM-GSM EDGE 1805-1880 MHz.

Comparison

- Power Gain of 15 dB - Efficiency of 52% - High linearity and thermal stability - None mentioned in the provided information.