MRF6S21100H - Brand New Freescale / NXP RF FETs
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Description
Electronic Component Model: MRF6S21100H is an RF Power Field Effect Transistor designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. These N-Channel Enhancement-Mode Lateral MOSFETs have high gain and broadband performance, making them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Specifications and features
- Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz: - Power Gain — 21.4 dB - Drain Efficiency — 32.1% - ACPR @ 750 kHz Offset — -47.6 dBc @ 30 kHz Bandwidth
- GSM EDGE Application: - Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921-960 MHz) - Power Gain — 20 dB - Drain Efficiency — 46% - Spectral Regrowth @ 400 kHz Offset = -62 dBc - Spectral Regrowth @ 600 kHz Offset = -78 dBc - EVM — 1.5% rms
- GSM Application: - Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921-960 MHz) - Power Gain — 20 dB - Drain Efficiency — 63% - Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power - Characterized with Series Equivalent Large-Signal Impedance Parameters - Integrated ESD Protection - N Suffix Indicates Lead-Free Terminations - 200°C Capable Plastic Package - TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. - TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Application Scenarios
This electronic component is suitable for use in broadband commercial and industrial applications with frequencies up to 1000 MHz. It is specifically designed for large-signal, common-source amplifier applications in 28 volt base station equipment.
Comparison
Advantages- High gain and broadband performance
- Suitable for large-signal, common-source amplifier applications
- Capable of handling 10:1 VSWR
- Integrated ESD protection
- 200°C capable plastic package
- Lead-Free Terminations
Disadvantages- Not suitable for frequencies above 1000 MHz
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Similar parts: 800 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
- - In-stock, Add to cart > Check out > Submit order > Complete payment >Delivery.
- - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Payment:
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- - Wire transfer, include Local bank transfer.
- - Western Union.
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Popular parts of the same kind
- Datasheet: Download MRF6S21100H
- Chipdatas Part: CD89-MRF6S21100H
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 16:58 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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We recommend to use bank transfer for large orders to save on handling fees.
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