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Description
2SK3075 is an electronic component model that falls under the product category of RF FETs. It is a field-effect transistor with a silicon N-channel MOS type. Specifically, it is designed to be used as an RF power MOSFET for VHF and UHF-band power amplifiers. However, it is important to note that these TOSHIBA products are intended solely for high-frequency power amplifiers of telecommunications equipment, and their use for any other purpose is neither intended nor warranted.
Specifications and Features
- Output Power: PO ≥ 7.5W
- Power Gain: GP ≥ 11.7dB
- Drain Efficiency: ηD ≥ 50%
Application Scenarios
The 2SK3075 RF FET is specifically designed for use in VHF and UHF-band power amplifiers in telecommunications equipment. It is optimized for high-frequency power amplification, making it suitable for applications that require enhanced signal amplification in these frequency ranges.
Comparison
Advantages- High output power of ≥ 7.5W
- High power gain of ≥ 11.7dB
- High drain efficiency of ≥ 50%
Disadvantages- Specifically designed for high-frequency power amplifiers of telecommunications equipment only
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download 2SK3075
- Chipdatas Part: CD94-2SK3075
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 09:33 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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