FDG6303N - Brand New ON Semiconductor FETs - Arrays
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Description
FDG6303N is a dual N-Channel logic level enhancement mode field effect transistor that is designed for low voltage applications. It is produced using Fairchilds proprietary high cell density DMOS technology, which helps minimize on-state resistance. This transistor is a replacement for bipolar digital transistors and small signal MOSFETs.
Specifications and features
- 25 V, 0.50 A continuous, 1.5 A peak
- RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) = 0.60 Ω @ VGS= 2.7 V
- Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V)
- Gate-Source Zener for ESD ruggedness (>6kV Human Body Model)
- Compact industry standard SC70-6 surface mount package
Application Scenarios
FDG6303N can be used in various low voltage applications such as:
- Bipolar digital transistors replacement
- Small signal MOSFETs replacement
Comparison
Advantages- Minimizes on-state resistance
- Low level gate drive requirements
- ESD ruggedness
- Compact size
Disadvantages- Limited to low voltage applications
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download FDG6303N
- Chipdatas Part: CD94-FDG6303N
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 08:14 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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