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NTLJD3119CTBG - Brand New onsemi FETs - Arrays - Datasheet - Chipdatas
NTLJD3119CTBG
NTLJD3119CTBG thumb pictures

NTLJD3119CTBG - Brand New onsemi FETs - Arrays

In Stock:18212 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 18212, Ready for Immediate Shipping
Brand:onsemi
Category:FETs - Arrays
Chipdatas Part No.:CD93-NTLJD3119CTBG
Manufacturer Part No.:NTLJD3119CTBG
Datecode:09+
Package:6-WDFN Exposed Pad
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  • Product Details

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    Low Profile, Small Footprint Packaging

    **ON Semiconductor offers the latest in low-profile, small-outline

    packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging available in the world, in vast volumes. Whether you are designing mobile phones, MP3 players, digital still cameras, PDAs, game players, or other portable appliances, our packaging technology allows the ON Semiconductor product portfolio to be used in designs with the most demanding space constraints.**

    All of our packages are available with Pb-free leads to ensure compliance with RoHS standards.

  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer onsemi
    Product Category FETs - Arrays
    Series μCool™
    Packaging Alternate Packaging
    Mounting-Style SMD/SMT
    Package-Case 6-WDFN Exposed Pad
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package 6-WDFN (2x2)
    Configuration N-Channel P-Channel
    FET-Type N and P-Channel
    Power-Max 710mW
    Transistor-Type 1 N-Channel 1 P-Channel
    VDSS – Drain-Source Voltage 20V
    Input Capacitance 271pF @ 10V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 2.6A, 2.3A
    Rds-On-Max-Id-Vgs 65 mOhm @ 3.8A, 4.5V
    Vgs-th-Max-Id 1V @ 250μA
    Gate-Charge-Qg-Vgs 3.7nC @ 4.5V
    Pd-Power-Dissipation 710 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 4.7 ns 13.2 ns
    Rise-Time 4.7 ns 13.2 ns
    Vgs-Gate-Source-Voltage 8 V
    ID (drain current) 3.8 A
    Vds-Drain-Source-Breakdown-Voltage 21 V - 20 V
    Rds-On-Drain-Source-Resistance 100 mOhms
    Transistor-Polarity N-Channel P-Channel
    Typical-Turn-Off-Delay-Time 11.1 ns 13.7 ns
    Turn-On Delay Time 3.8 ns 5.2 ns
    Transconductance 4.2 S 3.1 S
    Channel-Mode Enhancement
  • Datasheet
    Not found or temporary maintenance
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Additional Information
  • Datasheet: Download NTLJD3119CTBG
  • Chipdatas Part: CD93-NTLJD3119CTBG
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 14:55 +0800
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