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NTJD4105CT1G - Brand New ON Semiconductor FETs - Arrays - Datasheet - Chipdatas
NTJD4105CT1G
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NTJD4105CT1G - Brand New ON Semiconductor FETs - Arrays

In Stock:5769 ,Ready for Immediate Shipping
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In Stock: 5769, Ready for Immediate Shipping
Brand:ON Semiconductor
Category:FETs - Arrays
Chipdatas Part No.:CD94-NTJD4105CT1G
Manufacturer Part No.:NTJD4105CT1G
Datecode:09+
Package:SOT-363
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  • Description

    The Electronic Component Model NTJD4105CT1G is a small signal MOSFET with a voltage rating of 30V and a current rating of 250mA. It is a dual N-Channel MOSFET that is packaged in SC-88.

    Specifications and features

    • Low Gate Charge for Fast Switching
    • Small Footprint - 30% Smaller than TSOP-6
    • ESD Protected Gate
    • AEC Q101 Qualified - NVTJD4001N
    • Pb-Free and RoHS Compliant

    Application Scenarios

    • Low Side Load Switch
    • Li-Ion Battery Supplied Devices - Cell Phones, PDAs, DSC
    • Buck Converters
    • Level Shifts

    Comparison

    Advantages

    - Low gate charge allows for fast switching

    Disadvantages

    - None known

  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer ON Semiconductor
    Product Category FETs - Arrays
    Series NTJD4105C
    Packaging Alternate Packaging
    Unit-Weight 0.000265 oz
    Mounting-Style SMD/SMT
    Package-Case 6-TSSOP, SC-88, SOT-363
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package SC-88/SC70-6/SOT-363
    Configuration N-Channel P-Channel
    FET-Type N and P-Channel
    Power-Max 270mW
    Transistor-Type 1 N-Channel 1 P-Channel
    VDSS – Drain-Source Voltage 20V, 8V
    Input Capacitance 46pF @ 20V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 630mA, 775mA
    Rds-On-Max-Id-Vgs 375 mOhm @ 630mA, 4.5V
    Vgs-th-Max-Id 1.5V @ 250μA
    Gate-Charge-Qg-Vgs 3nC @ 4.5V
    Pd-Power-Dissipation 270 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 506 nS 36 nS
    Rise-Time 227 nS 23 nS
    Vgs-Gate-Source-Voltage 12 V 8 V
    ID (drain current) 630 mA
    Vds-Drain-Source-Breakdown-Voltage 20 V - 8 V
    Rds-On-Drain-Source-Resistance 375 mOhms 300 mOhms
    Transistor-Polarity N-Channel P-Channel
    Typical-Turn-Off-Delay-Time 786 nS 50 nS
    Turn-On Delay Time 83 nS 13 nS
    Qg-Gate-Charge 1.3 nC 2.2 nC
    Transconductance 2 S 2 S
    Channel-Mode Enhancement
  • Datasheet
    Not found or temporary maintenance
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  • Shopping guide

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    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download NTJD4105CT1G
  • Chipdatas Part: CD94-NTJD4105CT1G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 15:14 +0800
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    • Full or Partial Refund , If the item is not as described
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