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BLF8G22LS-160BV - Brand New NXP Semiconductors RF FETs - Datasheet - Chipdatas

BLF8G22LS-160BV - Brand New NXP Semiconductors RF FETs

In Stock:34936 ,Ready for Immediate Shipping
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In Stock: 34936, Ready for Immediate Shipping
Category:RF FETs
Chipdatas Part No.:CD86-BLF8G22LS-160BV
Manufacturer Part No.:BLF8G22LS-160BV
Datecode:09+
Package:SOT1120B
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  • Description

    Electronic Component Model: BLF8G22LS-160BV belongs to the product category of RF FETs. It is a 160W LDMOS power transistor designed specifically for base station applications. This transistor operates at frequencies ranging from 2000 MHz to 2200 MHz, making it suitable for W-CDMA base stations and multi-carrier applications.

    Specifications and features

    The BLF8G22LS-160BV power transistor offers several key features and benefits. It has excellent ruggedness, high efficiency, and low thermal resistance, ensuring stable performance. The decoupling leads provide improved video bandwidth of up to 100 MHz, while the lower output capacitance enhances performance in Doherty applications. The transistor is designed for low memory effects, enabling excellent pre-distortability. It is also internally matched for ease of use and integrated with ESD protection and current sense. Furthermore, this model complies with Directive 2002/95/EC, which restricts hazardous substances (RoHS).

    Application Scenarios

    The BLF8G22LS-160BV power transistor is commonly used as an RF power amplifier for W-CDMA base stations and multi-carrier applications within the frequency range of 2000 MHz to 2200 MHz.

    Comparison

    Advantages

    - Excellent ruggedness and high efficiency

    - Low thermal resistance for improved thermal stability

    - Decoupling leads for improved video bandwidth

    - Lower output capacitance for better performance in Doherty applications

    - Designed for low memory effects and pre-distortability

    - Internally matched for ease of use

    - Integrated ESD protection and current sense

    - Compliance with RoHS directive, ensuring restriction of hazardous substances

    Disadvantages

    - No specific disadvantages have been mentioned for this model.

  • Similar parts: 800 , Click to view
    Attributes Value
    Category RF FETs
    Manufacturer NXP Semiconductors
    Product Category RF FETs
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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download BLF8G22LS-160BV
  • Chipdatas Part: CD86-BLF8G22LS-160BV
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/30 18:39 +0800
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    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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