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NDC7002N - Brand New ON Semiconductor FETs - Arrays - Datasheet - Chipdatas

NDC7002N - Brand New ON Semiconductor FETs - Arrays

In Stock:200000 ,Ready for Immediate Shipping
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In Stock: 200000, Ready for Immediate Shipping
Category:FETs - Arrays
Chipdatas Part No.:CD93-NDC7002N
Manufacturer Part No.:NDC7002N
Datecode:09+
Package:TSOT-23-6
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  • General Description

    These dual N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch.

    Features
    ■ 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V
    ■ High density cell design for low RDS(ON).
    ■ Proprietary SuperSOTTM-6 package design using copper
    lead frame for superior thermal and electrical capabilities.
    ■ High saturation current.

  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer ON Semiconductor
    Product Category FETs - Arrays
    Series -
    Packaging Alternate Packaging
    Part-Aliases NDC7002N_NL
    Unit-Weight 0.001270 oz
    Mounting-Style SMD/SMT
    Package-Case SOT-23-6 Thin, TSOT-23-6
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package SuperSOT?-6
    Configuration Dual
    FET-Type 2 N-Channel (Dual)
    Power-Max 700mW
    Transistor-Type 2 N-Channel
    VDSS – Drain-Source Voltage 50V
    Input Capacitance 20pF @ 25V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 510mA
    Rds-On-Max-Id-Vgs 2 Ohm @ 510mA, 10V
    Vgs-th-Max-Id 2.5V @ 250μA
    Gate-Charge-Qg-Vgs 1nC @ 10V
    Pd-Power-Dissipation 960 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 6 ns
    Rise-Time 6 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 510 mA
    Vds-Drain-Source-Breakdown-Voltage 50 V
    Rds-On-Drain-Source-Resistance 2 Ohms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 11 ns
    Turn-On Delay Time 6 ns
    Channel-Mode Enhancement
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  • Shopping guide

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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download NDC7002N
  • Chipdatas Part: CD93-NDC7002N
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 13:20 +0800
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    • Full or Partial Refund , If the item is not as described
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