IRS2112STRPBF - Brand New Infineon Gate Drivers
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Description
The IRS2112STRPBF is a high voltage, high speed power MOSFET and IGBT driver. It is designed with proprietary HVIC and latch immune CMOS technologies, ensuring ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage, minimizing cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in both high-side and low-side configurations, supporting voltages up to 600V.
Specifications and features
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10V to 20V
- Undervoltage lockout
- CMOS Schmitt-triggered inputs with pull-down
- Output in phase with input
- RoHS compliant
- IRS2117 and IRS2118 available in PDIP8Application Scenarios
The IRS2112STRPBF is commonly used in applications where high voltage, high speed control of power MOSFETs or IGBTs is required. It is widely used in industries such as automotive, industrial automation, renewable energy, and motor control.
Comparison
Advantages- Ruggedized monolithic construction for increased durability
- Compatible with standard CMOS outputs for ease of use
- High pulse current buffer stage reduces cross-conduction
- Supports both high-side and low-side configurations for versatility
- Wide gate drive supply range for flexibilityDisadvantages- Available in limited packaging options
- May require additional components for proper operation depending on the application -
Similar parts: 2250 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download IRS2112STRPBF
- Chipdatas Part: CD93-IRS2112STRPBF
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 11:36 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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