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FDMB3800N - Brand New Fairchild Semiconductor FETs - Arrays - Datasheet - Chipdatas

FDMB3800N - Brand New Fairchild Semiconductor FETs - Arrays

In Stock:373 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 373, Ready for Immediate Shipping
Category:FETs - Arrays
Chipdatas Part No.:CD94-FDMB3800N
Manufacturer Part No.:FDMB3800N
Datecode:09+
Package:DFN
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  • Description

    This device, the FDMB3800N, is designed as a single package solution for Li-Ion battery pack protection circuits and other ultra-portable applications. It features two common drain P-channel MOSFETs, enabling bidirectional current flow. The FDMB3800N utilizes Fairchild's advanced PowerTrench® process and MicroFET Leadframe technology to minimize PCB space and offer a low profile of 0.8 mm maximum.

    Specifications and features

    • Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A
    • Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A
    • Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm
    • HBM ESD protection level 2.8 kV (Note 3)
    • RoHS Compliant

    Application Scenarios

    This device is specifically designed for use in Li-Ion battery packs.

    Comparison

    Advantages

    - Single package solution for Li-Ion battery pack protection circuits

    - Enables bidirectional current flow

    - Minimizes PCB space and offers a low profile

    - RoHS compliant

    Disadvantages

    - Limited to use in Li-Ion battery packs

  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer Fairchild Semiconductor
    Product Category FETs - Arrays
    Series PowerTrench®
    Packaging Alternate Packaging
    Unit-Weight 0.001658 oz
    Mounting-Style SMD/SMT
    Package-Case 8-PowerWDFN
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package 8-MLP, MicroFET (3x1.9)
    Configuration Dual Dual Drain
    FET-Type 2 N-Channel (Dual)
    Power-Max 750mW
    Transistor-Type 2 N-Channel
    VDSS – Drain-Source Voltage 30V
    Input Capacitance 465pF @ 15V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 4.8A
    Rds-On-Max-Id-Vgs 40 mOhm @ 4.8A, 10V
    Vgs-th-Max-Id 3V @ 250μA
    Gate-Charge-Qg-Vgs 5.6nC @ 5V
    Pd-Power-Dissipation 1.6 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 5 ns
    Rise-Time 5 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 4.8 A
    Vds-Drain-Source-Breakdown-Voltage 30 V
    Rds-On-Drain-Source-Resistance 32 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 21 ns
    Turn-On Delay Time 8 ns
    Transconductance 14 S
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

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    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download FDMB3800N
  • Chipdatas Part: CD94-FDMB3800N
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 12:08 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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