IRS2453DSTRPBF - Brand New Infineon Gate Drivers
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Description
The IRS2453DSTRPBF is a high voltage, high-speed power MOSFET and IGBT driver designed with independent high-side and low-side referenced output channels. It features proprietary HVIC and latch immune CMOS technologies which enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Specifications and Features
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20V
- Undervoltage lockout for both channels
- 3.3 V and 5 V input logic compatible
- Matched propagation delay for both channels
- Logic and power ground +/- 5 V offset
- Lower di/dt gate driver for better noise immunity
- Output source/sink current capability 1.4 A/1.8A
- RoHS compliantApplication Scenarios
The IRS2453DSTRPBF is suitable for various applications that require high voltage, high-speed power MOSFET and IGBT drivers. It can be used in motor control, power supplies, inverters, and other industrial and automotive systems.
Comparison
Advantages- High voltage and high-speed performance
- Independent high-side and low-side output channels
- Compatible with standard CMOS or LSTTL output
- Can drive N-channel power MOSFET or IGBT in high-side configuration
- Ruggedized monolithic constructionDisadvantages- Requires gate drive supply range from 10 V to 20V
- Offset in logic and power ground +/- 5 V -
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download IRS2453DSTRPBF
- Chipdatas Part: CD93-IRS2453DSTRPBF
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 17:26 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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