Description

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. They are designed using proprietary HVIC and latch immune CMOS technologies for ruggedized monolithic construction. The logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

Specifications and features

The IR2113-2 is a model in the IR2110/IR2113 series. It has the following features:

• Floating channel designed for bootstrap operation
• Fully operational to +500V or +600V
• Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
• Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs

Application Scenarios

The IR2113-2 is suitable for driving power MOSFETs or IGBTs in high voltage, high frequency applications, such as in switching power supplies, motor drivers, and UPS systems.

Comparison

• High voltage and high speed operation
• Tolerant to negative transient voltage dV/dt immune
• Matched propagation delay for both channels
• Separate logic supply range from 3.3V to 20V

• Requires an external bootstrap capacitor for operation
• Not suitable for low voltage applications
• Cannot drive power devices in the low side configuration