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IRF7317PBF - Brand New Infineon FETs - Arrays - Datasheet - Chipdatas

IRF7317PBF - Brand New Infineon FETs - Arrays

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Brand:Infineon
Category:FETs - Arrays
Chipdatas Part No.:CD94-IRF7317PBF
Manufacturer Part No.:IRF7317PBF
Datecode:09+
Package:8-SOIC 0.154", 3.90mm Width
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  • Description

    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

    Specifications and features

    l Generation V Technology
    l Ultra Low On-Resistance
    l Dual N and P Channel MOSFET
    l Surface Mount
    l Fully Avalanche Rated

    Application Scenarios

    Due to its advanced processing techniques and efficient design, the IRF7317PBF is suitable for a wide range of applications, including:

    • Power electronics
    • Motor control
    • Automotive systems
    • Industrial equipment
    • Renewable energy systems

    Comparison

    Advantages:

    • Extremely low on-resistance per silicon area
    • Fast switching speed
    • Ruggedized device design
    • Reliable performance

    Disadvantages:

    • May require additional cooling for high power applications
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer Infineon
    Product Category FETs - Arrays
    Series HEXFET®
    Packaging Tube Alternate Packaging
    Unit-Weight 0.019048 oz
    Mounting-Style SMD/SMT
    Package-Case 8-SOIC (0.154", 3.90mm Width)
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package 8-SO
    Configuration Dual Dual Drain
    FET-Type N and P-Channel
    Power-Max 2W
    Transistor-Type 1 N-Channel 1 P-Channel
    VDSS – Drain-Source Voltage 20V
    Input Capacitance 900pF @ 15V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 6.6A, 5.3A
    Rds-On-Max-Id-Vgs 29 mOhm @ 6A, 4.5V
    Vgs-th-Max-Id 700mV @ 250μA
    Gate-Charge-Qg-Vgs 27nC @ 4.5V
    Pd-Power-Dissipation 2 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 31 ns 49 ns
    Rise-Time 17 ns 40 ns
    Vgs-Gate-Source-Voltage 12 V
    ID (drain current) 6.6 A
    Vds-Drain-Source-Breakdown-Voltage 20 V
    Rds-On-Drain-Source-Resistance 29 mOhms
    Transistor-Polarity N-Channel P-Channel
    Typical-Turn-Off-Delay-Time 38 ns 42 ns
    Turn-On Delay Time 8.1 ns 15 ns
    Qg-Gate-Charge 18 nC
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download IRF7317PBF
  • Chipdatas Part: CD94-IRF7317PBF
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/05/21 00:59 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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