MRF8S21200HS - Brand New Freescale / NXP RF FETs
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Product Details
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728--768 MHz, 63 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET
Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
**• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.**
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 360 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 260 Watts CWFeatures
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. -
Similar parts: 800 , Click to view
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Datasheet
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Delivery period:
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- - EMS: 10-15 business days
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Popular parts of the same kind
- Datasheet: Download MRF8S21200HS
- Chipdatas Part: CD87-MRF8S21200HS
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/29 04:03 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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