MRF5P20180H - Brand New Freescale / NXP RF FETs
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RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
• Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2 x
800 mA, Pout = 38 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — -37.5 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -41 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. -
Similar parts: 800 , Click to view
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Datasheet
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- Datasheet: Download MRF5P20180H
- Chipdatas Part: CD94-MRF5P20180H
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/14 09:26 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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