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MRF6S21140HSR3 - Brand New Freescale / NXP RF FETs - Datasheet - Chipdatas

MRF6S21140HSR3 - Brand New Freescale / NXP RF FETs

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In Stock: 2342, Ready for Immediate Shipping
Category:RF FETs
Chipdatas Part No.:CD86-MRF6S21140HSR3
Manufacturer Part No.:MRF6S21140HSR3
Datecode:09+
Package:NI-880S
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  • Product Details

    __

    RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

    Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

    **• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,

    IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.**

    Power Gain — 21.4 dB
    Drain Efficiency — 32.1%
    ACPR @ 750 kHz Offset — -47.6 dBc @ 30 kHz Bandwidth

    GSM EDGE Application

    • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921-960 MHz)
    Power Gain — 20 dB
    Drain Efficiency — 46%
    Spectral Regrowth @ 400 kHz Offset = -62 dBc
    Spectral Regrowth @ 600 kHz Offset = -78 dBc
    EVM — 1.5% rms

    GSM Application

    • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921-960 MHz)
    Power Gain — 20 dB
    Drain Efficiency — 63%
    • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power
    • Characterized with Series Equivalent Large-Signal Impedance Parameters
    • Integrated ESD Protection
    • N Suffix Indicates Lead-Free Terminations
    • 200°C Capable Plastic Package
    • TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
    • TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

  • Similar parts: 800 , Click to view
    Attributes Value
    Category RF FETs
    Manufacturer NXP USA Inc.
    Product Category RF FETs
    Categories Transistors - FETs, MOSFETs - RF
    Series -
    Packaging Tape & Reel (TR)
    Part-Status Obsolete
    Transistor-Type LDMOS
    Frequency 2.12GHz
    Gain 15.5dB
    Voltage-Test 28V
    Current-Rating -
    Noise-Figure -
    Current-Test 1.2A
    Power-Output 30W
    Voltage-Rated 68V
    Package-Case NI-880S
    Supplier-Device-Package NI-880S
    Base-Part-Number MRF6S21140
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Additional Information
  • Datasheet: Download MRF6S21140HSR3
  • Chipdatas Part: CD86-MRF6S21140HSR3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/24 21:16 +0800
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    • Full or Partial Refund , If the item is not as described
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