Description

The BG3130 is an RF FET (Field Effect Transistor) electronic component model. It belongs to the product category of RF FETs, which are transistors specifically designed to handle radio-frequency signals. The BG3130 is a high-performance RF FET that can operate at frequencies up to 3GHz. It is commonly used in amplifier circuits, oscillators, and other RF applications.

Specifications and features

• Frequency range: DC-3GHz
• Gate voltage (max): 30V
• Drain current (max): 370mA
• Output power (max): 28dBm
• Noise figure: 0.65dB
• Gain (max): 20dB

Application Scenarios

The BG3130 is commonly used in various RF applications, such as:

• Amplifier circuits
• Oscillator circuits
• Mixer circuits
• Transmitter/receiver circuits
• Test and measurement equipment

Comparison

• Wide frequency range up to 3GHz
• High output power of up to 28dBm
• Relatively low noise figure of 0.65dB
• Can handle relatively large drain currents up to 370mA

• May not be suitable for very high-frequency applications above 3GHz
• Requires careful matching and biasing for optimum performance
• Relatively large physical size compared to some other RF FETs