MRF5S19100H - Brand New Freescale / NXP RF FETs
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The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETsDesigned for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts,
IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS-95 (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 13.9 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — -36.5 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -50.7 dBc @ 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. -
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
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- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
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- Datasheet: Download MRF5S19100H
- Chipdatas Part: CD93-MRF5S19100H
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/30 15:19 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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We recommend to use bank transfer for large orders to save on handling fees.
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