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ZXMC3A17DN8TA - Brand New Diodes Incorporated FETs - Arrays - Datasheet - Chipdatas

ZXMC3A17DN8TA - Brand New Diodes Incorporated FETs - Arrays

In Stock:50 ,Ready for Immediate Shipping
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In Stock: 50, Ready for Immediate Shipping
Category:FETs - Arrays
Chipdatas Part No.:CD93-ZXMC3A17DN8TA
Manufacturer Part No.:ZXMC3A17DN8TA
Datecode:09+
Package:8-SOIC 0.154", 3.90mm Width
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  • Description

    ZXMC3A17DN8TA is a FETs - Arrays electronic component model. It belongs to the family of dual N-channel 60V MOSFETs with a common drain connection.

    Specifications and features

    The ZXMC3A17DN8TA features a continuous drain current of 1.7A, a low on-resistance of 140mOhms at VGS=10V, and a saturation voltage of 240mV at a drain current of 1.7A. Other specifications include a gate threshold voltage of 2V, a maximum gate-source voltage of +/- 20V, and a total power dissipation of 2.25W. This component is RoHS compliant and halogen-free.

    Application Scenarios

    This electronic component is suitable for a wide range of applications, including power management, load switching, and DC-DC converters. It can be used in various devices, such as laptops, smartphones, and tablets.

    Comparison

    Advantages
    • Low on-resistance
    • Halogen-free and RoHS compliant
    • Good for power management and load switching applications
    Disadvantages
    • The maximum gate-source voltage is +/- 20V, which may not be suitable for some high-voltage applications
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer Diodes Incorporated
    Product Category FETs - Arrays
    Series ZXMC3
    Packaging Alternate Packaging
    Unit-Weight 0.002610 oz
    Mounting-Style SMD/SMT
    Package-Case 8-SOIC (0.154", 3.90mm Width)
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package 8-SO
    Configuration Dual Dual Drain
    FET-Type N and P-Channel
    Power-Max 1.25W
    Transistor-Type 1 N-Channel 1 P-Channel
    VDSS – Drain-Source Voltage 30V
    Input Capacitance 600pF @ 25V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 4.1A, 3.4A
    Rds-On-Max-Id-Vgs 50 mOhm @ 7.8A, 10V
    Vgs-th-Max-Id 1V @ 250μA (Min)
    Gate-Charge-Qg-Vgs 12.2nC @ 10V
    Pd-Power-Dissipation 2.1 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 11.2 ns 8.7 ns
    Rise-Time 6.4 ns 2.9 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 5.4 A
    Vds-Drain-Source-Breakdown-Voltage 30 V
    Rds-On-Drain-Source-Resistance 65 mOhms
    Transistor-Polarity N-Channel P-Channel
    Typical-Turn-Off-Delay-Time 16 ns 29.2 ns
    Turn-On Delay Time 2.9 ns 1.7 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download ZXMC3A17DN8TA
  • Chipdatas Part: CD93-ZXMC3A17DN8TA
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 19:46 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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