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ZXTN25012EFLTA - Brand New Diodes Incorporated Transistors (BJT) - Single - Datasheet - Chipdatas
ZXTN25012EFLTA
ZXTN25012EFLTA thumb pictures

ZXTN25012EFLTA - Brand New Diodes Incorporated Transistors (BJT) - Single

In Stock:3823 ,Ready for Immediate Shipping
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In Stock: 3823, Ready for Immediate Shipping
Brand:Diodes Incorporated
Category:Transistors (BJT) - Single
Chipdatas Part No.:CD92-ZXTN25012EFLTA
Manufacturer Part No.:ZXTN25012EFLTA
Datecode:09+
Package:TO-236-3, SC-59, SOT-23-3
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  • Description

    Advanced process capability has been used to achieve high current gain hold up making this Electronic Component Model ZXTN25012EFLTA ideal for applications requiring high pulse currents.

    Specifications and Features

    Product Category: Transistors (BJT) - Single

    High peak current

    Low saturation voltage

    6V reverse blocking voltage

    Application Scenarios

    MOSFET and IGBT gate driving

    DC-DC conversion

    LED driving

    Interface between low voltage ICs and load

    Comparison

    Advantages

    - Advanced process capability

    - High current gain hold up

    - Ideal for applications requiring high pulse currents

    Disadvantages

    - None mentioned

  • Similar parts: 7128 , Click to view
    Attributes Value
    Category Transistors (BJT) - Single
    Manufacturer Diodes Incorporated
    Product Category Transistors (BJT) - Single
    Series ZXTN250
    Packaging Alternate Packaging
    Unit-Weight 0.000282 oz
    Mounting-Style SMD/SMT
    Package-Case TO-236-3, SC-59, SOT-23-3
    Mounting-Type Surface Mount
    Supplier-Device-Package SOT-23-3
    Configuration Single
    Power-Max 350mW
    Transistor-Type NPN
    Electric current collectors 2A
    Voltage-Collector-Emitter-Breakdown-Max 12V
    DC-Current-Gain-hFE-Min-Ic-Vce 500 @ 10mA, 2V
    Vce saturation 300mV @ 100mA, 5A
    Current-Collector-Cutoff-Max 50nA (ICBO)
    Frequency-Transition 260MHz
    Pd-Power-Dissipation 350 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Collector-Emitter-Voltage-VCEO-Max 12 V
    Transistor-Polarity NPN
    Collector-Base-Voltage-VCBO 20 V
    Emitter-Base-Voltage-VEBO 7 V
    Maximum-DC-Collector-Current 2 A
    Gain-Bandwidth-Product-fT 260 MHz
    DC-Collector-Base-Gain-hfe-Min 500 at 10 mA at 2 V 500 at 1 A at 2 V 370 at 2 A at 2 V 210 at 5 A at 2 V 30 at 15 A at 2 V
    DC-Current-Gain-hFE-Max 500 at 10 mA at 2 V
  • Datasheet
    Not found or temporary maintenance
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download ZXTN25012EFLTA
  • Chipdatas Part: CD92-ZXTN25012EFLTA
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 09:37 +0800
Refund
  • View Policy
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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